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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Element Configuration
- Single
- Emitter Base Voltage Vebo
- 5V
- Voltage Rated Dc
- -160V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 400MHz
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 7 Weeks
- Terminal Pozisyonu
- BOTTOM
- Akım Değeri
- -600mA
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 150V
- Polaritychannel Type
- PNP
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 160V
- Max Power Dissipation
- 625mW
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Transition Frequency
- 100MHz
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Temel Parça No
- 2N5401
- Max Collector Current
- 600mA
- Power Dissipation
- 625mW
- Montaj Tipi
- Through Hole
- Frekans
- 400MHz
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Yayın Yılı
- 2012
- Transistor Type
- PNP
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tape & Box (TB)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Voltage Vceo
- 150V
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