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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Emitter Base Voltage Vebo
- 5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- HTS Kodu
- 8541.21.00.95
- Gain Bandwidth Product
- 300MHz
- Voltage Rated Dc
- -150V
- Terminal Sayısı
- 3
- Akım Değeri
- -600mA
- Terminal Pozisyonu
- BOTTOM
- Collectoremitter Breakdown Voltage
- 150V
- Polaritychannel Type
- PNP
- JESD-609 Kodu
- e1
- Collector Base Voltage Vcbo
- 160V
- Max Power Dissipation
- 625mW
- Currentcollector Ic Max
- 600mA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Hfemin
- 50
- Qualification Status
- Not Qualified
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- RoHS Compliant
- Pin Sayısı
- 3
- REACH Uyumluluk Kodu
- unknown
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 50nA ICBO
- Transition Frequency
- 100MHz
- ECCN Kodu
- EAR99
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- Transistor Element Material
- SILICON
- Max Collector Current
- 600mA
- Temel Parça No
- 2N5401
- Montaj Tipi
- Through Hole
- Additional Feature
- EUROPEAN PART NUMBER
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Collectoremitter Saturation Voltage
- 500mV
- Yayın Yılı
- 2005
- Transistor Type
- PNP
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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