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2N5190G

ON Semiconductor

2N5190G

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Polaritychannel Type
NPN
JESD-609 Kodu
e3
Emitter Base Voltage Vebo
5V
Gain Bandwidth Product
2MHz
Voltage Rated Dc
40V
Element Configuration
Single
Terminal Sayısı
3
Fabrika Tedarik Süresi
2 Weeks
Parça Durumu
Active
Current Collector Cutoff Max
1mA
Vce Saturation Max Ib Ic
1.4V @ 1A, 4A
RoHS Durumu
ROHS3 Compliant
Transistor Application
SWITCHING
Pin Sayısı
3
Radyasyon Dayanımı
No
Pin Sayısı
3
Transistor Type
NPN
Yayın Yılı
2000
Transistor Element Material
SILICON
Frekans
2MHz
Power Dissipation
40W
Reach Svhc
No SVHC
Weight
4.535924g
Kurşunsuz Kodu
yes
Number Of Elements
1
Ambalaj
Bulk
Collectoremitter Breakdown Voltage
40V
Akım Değeri
4A
Collector Base Voltage Vcbo
40V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Kaplaması
Tin (Sn)
Halogen Free
Halogen Free
Uzunluk
6.35mm
Genişlik
6.35mm
Transition Frequency
2MHz
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
260
Max Power Dissipation
40W
Hfemin
25
Dc Current Gain Hfe Min Ic Vce
25 @ 1.5A 2V

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