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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 625mW
- Frequency Transition
- 50MHz
- Maks. Çalışma Sıcaklığı
- 150°C
- Min. Çalışma Sıcaklığı
- -55°C
- Kurşunsuz
- Contains Lead
- Ambalaj
- Bulk
- Polarity
- NPN
- Collector Emitter Voltage Vceo
- 500mV
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Tedarikçi Cihaz Paketi
- TO-92-3
- Dc Current Gain Hfe Min Ic Vce
- 400 @ 100μA 5V
- Collectoremitter Saturation Voltage
- 500mV
- Yayın Yılı
- 2006
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Type
- NPN
- Temel Parça No
- 2N5089
- Max Collector Current
- 50mA
- Montaj Tipi
- Through Hole
- Power Dissipation
- 625mW
- RoHS Durumu
- Non-RoHS Compliant
- Vce Saturation Max Ib Ic
- 500mV @ 1mA, 10mA
- Current Collector Cutoff Max
- 50nA ICBO
- Parça Durumu
- Obsolete
- Max Power Dissipation
- 625mW
- Voltage Collector Emitter Breakdown Max
- 25V
- Currentcollector Ic Max
- 50mA
- Hfemin
- 400
- Akım Değeri
- 50mA
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 25V
- Collector Base Voltage Vcbo
- 30V
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 50MHz
- Voltage Rated Dc
- 25V
- Emitter Base Voltage Vebo
- 3V
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