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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 300
- Radyasyon Dayanımı
- No
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 625mW
- ECCN Kodu
- EAR99
- Vce Saturation Max Ib Ic
- 500mV @ 1mA, 10mA
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 50nA ICBO
- Transition Frequency
- 50MHz
- Pin Sayısı
- 3
- RoHS Durumu
- RoHS Compliant
- Transistor Application
- AMPLIFIER
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- HTS Kodu
- 8541.21.00.95
- Gain Bandwidth Product
- 50MHz
- Voltage Rated Dc
- 30V
- Emitter Base Voltage Vebo
- 3V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- 35V
- JESD-609 Kodu
- e1
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 30V
- Polaritychannel Type
- NPN
- Terminal Pozisyonu
- BOTTOM
- Akım Değeri
- 50mA
- Collector Emitter Voltage Vceo
- 30V
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 40
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Temel Parça No
- 2N5088
- Max Collector Current
- 50mA
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Type
- NPN
- Yayın Yılı
- 2006
- Collectoremitter Saturation Voltage
- 500mV
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