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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frekans
- 50MHz
- Montaj Tipi
- Through Hole
- Power Dissipation
- 625mW
- Temel Parça No
- 2N5088
- Max Collector Current
- 100mA
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Type
- NPN
- Yayın Yılı
- 2001
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 100μA 5V
- Collectoremitter Saturation Voltage
- 500mV
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Pin Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Voltage Vceo
- 30V
- Ambalaj
- Bulk
- Weight
- 179mg
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Yükseklik
- 5.33mm
- Reach Svhc
- No SVHC
- Terminal Sayısı
- 3
- Voltage Rated Dc
- 30V
- Gain Bandwidth Product
- 50MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 4.5V
- Element Configuration
- Single
- Terminal Kaplaması
- Tin (Sn)
- Collector Base Voltage Vcbo
- 35V
- JESD-609 Kodu
- e3
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 30V
- Polaritychannel Type
- NPN
- Akım Değeri
- 100mA
- Terminal Pozisyonu
- BOTTOM
- Hfemin
- 300
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 625mW
- ECCN Kodu
- EAR99
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