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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Power Dissipation
- 625mW
- Frekans
- 40MHz
- Pin Sayısı
- 3
- Yayın Yılı
- 2006
- Transistor Type
- PNP
- Ambalaj
- Cut Tape (CT)
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- Gain Bandwidth Product
- 40MHz
- Voltage Rated Dc
- -50V
- Emitter Base Voltage Vebo
- 3V
- Terminal Sayısı
- 3
- JESD-609 Kodu
- e1
- Polaritychannel Type
- PNP
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- RoHS Compliant
- Vce Saturation Max Ib Ic
- 300mV @ 1mA, 10mA
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 50nA ICBO
- Max Collector Current
- 50mA
- Temel Parça No
- 2N5087
- Montaj Tipi
- Through Hole
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 100μA 5V
- Collectoremitter Saturation Voltage
- 300mV
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 40
- Yüzey Montaj
- NO
- Collector Emitter Voltage Vceo
- 50V
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Yükseklik
- 5.33mm
- Kurşunsuz
- Lead Free
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Breakdown Voltage
- 50V
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