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2N4921G

ON Semiconductor

2N4921G

Single BJT Transistors

RoHS: Compliant

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RoHS

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Specifications

Fabrika Tedarik Süresi
2 Weeks
Terminal Sayısı
3
Emitter Base Voltage Vebo
5V
Voltage Rated Dc
40V
Gain Bandwidth Product
3MHz
Element Configuration
Single
Polaritychannel Type
NPN
JESD-609 Kodu
e3
Radyasyon Dayanımı
No
Current Collector Cutoff Max
500μA
Parça Durumu
Active
Vce Saturation Max Ib Ic
600mV @ 100mA, 1A
RoHS Durumu
ROHS3 Compliant
Transistor Application
SWITCHING
Pin Sayısı
3
Frekans
3MHz
Power Dissipation
30W
Transistor Element Material
SILICON
Transistor Type
NPN
Yayın Yılı
2000
Pin Sayısı
3
Ambalaj
Bulk
Weight
4.535924g
Kurşunsuz Kodu
yes
Number Of Elements
1
Reach Svhc
No SVHC
Halogen Free
Halogen Free
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Base Voltage Vcbo
40V
Collectoremitter Breakdown Voltage
40V
Akım Değeri
1A
Hfemin
40
Contact Plating
Tin
Tepe Reflow Sıcaklığı (°C)
260
Max Power Dissipation
30W
Genişlik
2.66mm
Transition Frequency
3MHz
ECCN Kodu
EAR99
Uzunluk
7.74mm
Montaj Tipi
Through Hole

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