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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 600mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 40V
- Transition Frequency
- 200MHz
- Ambalaj
- Tape & Box (TB)
- Collector Base Voltage Vcbo
- -40V
- Kurşunsuz
- Lead Free
- Emitter Base Voltage Vebo
- -5V
- Terminal Pozisyonu
- BOTTOM
- Akım Değeri
- -600mA
- Uzunluk
- 5.2mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Through Hole
- Genişlik
- 4.19mm
- Max Power Dissipation
- 625mW
- Pin Sayısı
- 3
- Temel Parça No
- 2N4403
- Number Of Elements
- 1
- Voltage Rated Dc
- -40V
- Max Breakdown Voltage
- 40V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation Max Ib Ic
- 750mV @ 50mA, 500mA
- Kurşunsuz Kodu
- yes
- Fabrika Tedarik Süresi
- 6 Weeks
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Frekans
- 200MHz
- Reach Svhc
- No SVHC
- Weight
- 240mg
- Power Dissipation
- 625mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Hfemin
- 100
- Yayın Yılı
- 2007
- Transistor Type
- PNP
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