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2N3906G

ON Semiconductor

2N3906G

Single BJT Transistors

RoHS: Compliant

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Specifications

Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Through Hole
Uzunluk
5.2mm
Tip
General Purpose
Akım Değeri
200mA
Terminal Pozisyonu
BOTTOM
Terminal
Through Hole
Emitter Base Voltage Vebo
5V
Kurşunsuz
Lead Free
Max Power Dissipation
625mW
Pin Sayısı
3
Temel Parça No
2N3906
Genişlik
4.19mm
Turn On Timemax Ton
70ns
Max Collector Current
200mA
Collector Base Voltage Vcbo
40V
Ambalaj
Bulk
Collectoremitter Breakdown Voltage
40V
Transition Frequency
250MHz
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 1V
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Collectoremitter Saturation Voltage
400mV
Yayın Yılı
2007
Transistor Type
PNP
Yükseklik
5.33mm
Hfemin
60
Nem Hassasiyeti (MSL)
1 (Unlimited)
Reach Svhc
No SVHC
Frekans
250MHz
Power Dissipation
625mW
Gain Bandwidth Product
250MHz
RoHS Durumu
RoHS Compliant
Contact Plating
Copper, Silver, Tin
JESD-609 Kodu
e1
Collector Emitter Voltage Vceo
40V
Radyasyon Dayanımı
No
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Pin Sayısı
3
Number Of Elements
1

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