Volume pricing
- 1+ pcs$0.18
- 10+ pcs$0.17
- 100+ pcs$0.16
- 500+ pcs$0.15
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Base R1
- 4.7 kOhms
- Collector Currentmax Ic
- 0.1 A
- Transistor Element Material
- SILICON
- Ihs Manufacturer
- ON SEMICONDUCTOR
- Paket
- Bulk
- Power Dissipationmax Abs
- 0.338 W
- REACH Uyumluluk Kodu
- compliant
- Operating Temperaturemin
- -55 °C
- Package Style
- SMALL OUTLINE
- Package Shape
- RECTANGULAR
- Package Description
- SMALL OUTLINE, R-PDSO-G3
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- Yes
- Vce Saturation Max Ib Ic
- 250mV @ 1mA, 10mA
- Continuous Collector Current
- 100
- Ürün Durumu
- Obsolete
- Collectoremitter Voltagemax
- 50 V
- Montaj Tipi
- Surface Mount
- Üretici Parça No
- NSVMUN2132T1G
- Manufacturer Package Code
- 318D-04
- Voltage Collector Emitter Breakdown Max
- 50 V
- Transistor Polarity
- PNP
- Number Of Terminals
- 3
- Yüzey Montaj
- YES
- Polaritychannel Type
- PNP
- Risk Rank
- 5.75
- Jesd30 Code
- R-PDSO-G3
- Terminal Formu
- GULL WING
- Resistor Emitter Base R2
- 4.7 kOhms
- Terminal Pozisyonu
- DUAL
- Transistor Type
- PNP - Pre-Biased
- Transistor Application
- SWITCHING
- Brand Name
- ON Semiconductor
- Power Dissipation
- 338
- Tedarikçi Cihaz Paketi
- SC-59
- Currentcollector Ic Max
- 100 mA
- Reference Standard
- AEC-Q101
- Dc Current Gain Hfe Min Ic Vce
- 15 @ 5mA, 10V
- Power Max
- 230 mW
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
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