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2SC4080E-TD-E

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Jesd30 Code
R-PSSO-F3
Vcesatmax
1 V
Ürün Durumu
Active
Transistor Application
AMPLIFIER
Configuration
DARLINGTON
Package Style
SMALL OUTLINE
Power Dissipationmax Abs
1.3 W
Transistor Element Material
SILICON
Collectorbase Capacitancemax
1.8 pF
Seri
*
Ihs Manufacturer
ON SEMICONDUCTOR
Yüzey Montaj
YES
Polaritychannel Type
NPN
Power Dissipation Ambientmax
0.5 W
JESD-609 Kodu
e6
Terminal Pozisyonu
SINGLE
Collectoremitter Voltagemax
200 V
Transition Frequencynom Ft
400 MHz
Rohs Code
Yes
REACH Uyumluluk Kodu
compliant
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Number Of Elements
1
Paket
Bulk
Terminal Formu
FLAT
Dc Current Gainmin Hfe
100
Number Of Terminals
3
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Case Connection
COLLECTOR
Collector Currentmax Ic
0.1 A
Moisture Sensitivity Levels
1
Package Description
SMALL OUTLINE, R-PSSO-F3
Risk Rank
5.77
Operating Temperaturemax
150 °C
Part Life Cycle Code
End Of Life
Üretici Parça No
2SC4080E-TD-E

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