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Specifications
- Voltage Collector Emitter Breakdown Max
- 50 V
- Resistor Emitter Base R2
- 4.7 kOhms
- Current Collector Cutoff Max
- 500nA
- Transistor Type
- PNP - Pre-Biased
- Seri
- PDTB143
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 50mA, 5V
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Tedarikçi Cihaz Paketi
- DFN1010D-3
- Paket
- Bulk
- Currentcollector Ic Max
- 500 mA
- Ürün Durumu
- Active
- Frequency Transition
- 150 MHz
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 100mV @ 2.5mA, 50mA
- Resistor Base R1
- 4.7 kOhms
- Power Max
- 325 mW
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