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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Operating Temperature Max
- 150°C
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Voltage Collector Emitter Breakdown Max
- 50V
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 1μA
- Power Max
- 150mW
- Resistor Base R1
- 2.2 k Ω
- Tepe Reflow Süresi (maks. sn)
- 40
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 10mA
- Power Dissipationmax Abs
- 0.15W
- Dc Current Gain Hfe Min Ic Vce
- 35 @ 5mA 5V
- Temel Parça No
- PDTA123
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2009
- Yüzey Montaj
- YES
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Resistor Emitter Base R2
- 10 k Ω
- Transistor Type
- PNP - Pre-Biased
- Number Of Elements
- 1
- Qualification Status
- Not Qualified
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 4.5
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Polaritychannel Type
- PNP
- Jesd30 Code
- R-PDSO-G3
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SC-75, SOT-416
- Currentcollector Ic Max
- 100mA
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
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