Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA 5V
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 10mA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Resistor Base R1
- 10 k Ω
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 1μA
- Power Max
- 500mW
- Voltage Collector Emitter Breakdown Max
- 50V
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- REACH Uyumluluk Kodu
- unknown
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Transistor Element Material
- SILICON
- Transistor Type
- PNP - Pre-Biased
- RoHS Durumu
- ROHS3 Compliant
- Resistor Emitter Base R2
- 10 k Ω
- ECCN Kodu
- EAR99
- Yüzey Montaj
- NO
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2004
- Temel Parça No
- PDTA114
- Qualification Status
- Not Qualified
- HTS Kodu
- 8541.21.00.95
- Number Of Elements
- 1
- Terminal Pozisyonu
- BOTTOM
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Currentcollector Ic Max
- 100mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Ambalaj
- Tape & Box (TB)
- Jesd30 Code
- O-PBCY-T3
- Polaritychannel Type
- PNP
- Montaj Tipi
- Through Hole
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Terminal Kaplaması
- TIN
- Transistor Application
- SWITCHING
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