Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating Eas
- 655 mJ
- Polaritychannel Type
- N-CHANNEL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reference Standard
- AEC-Q101; IEC-60134
- Rohs Code
- Yes
- Pulsed Drain Currentmax Idm
- 1019 A
- Drainsource On Resistancemax
- 0.0025 Ω
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Package Description
- SMALL OUTLINE, R-PSSO-G2
- Part Life Cycle Code
- Active
- Case Connection
- DRAIN
- Moisture Sensitivity Levels
- 1
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PSSO-G2
- Package Shape
- RECTANGULAR
- Reflow Temperaturemax S
- NOT SPECIFIED
- JESD-609 Kodu
- e3
- Risk Rank
- 5.38
- Ihs Manufacturer
- NEXPERIA
- Drain Currentmax Id
- 120 A
- Number Of Terminals
- 2
- Package Style
- SMALL OUTLINE
- Üretici Parça No
- BUK962R5-60E
- Terminal Pozisyonu
- SINGLE
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- REACH Uyumluluk Kodu
- not_compliant
- Terminal Kaplaması
- Tin (Sn)
- Package Body Material
- PLASTIC/EPOXY
- Transistor Element Material
- SILICON
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Ds Breakdown Voltagemin
- 60 V
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