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C3 ChipZentronix

NXP USA Inc.

BC856B/DG/B3235

Single BJT Transistors

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Specifications

Tedarikçi Cihaz Paketi
TO-236AB
Frequency Transition
100MHz
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Paket
Bulk
Ürün Durumu
Active
Vce Saturation Max Ib Ic
650mV @ 5mA, 100mA
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA, 5V
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
150°C (TJ)
Current Collector Cutoff Max
15nA (ICBO)
Currentcollector Ic Max
100 mA
Power Max
250 mW
Voltage Collector Emitter Breakdown Max
65 V
Transistor Type
PNP

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