Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Çalışma Sıcaklığı
- 150°C TJ
- Dc Current Gain Hfe Min Ic Vce
- 210 @ 2mA 10V
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Frequency Transition
- 100MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Jedec95 Code
- TO-236AB
- Terminal Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Kaplaması
- TIN
- Current Collector Cutoff Max
- 10nA ICBO
- JESD-609 Kodu
- e3
- Vcesatmax
- 0.5 V
- Parça Durumu
- Obsolete
- HTS Kodu
- 8541.21.00.95
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Power Dissipationmax Abs
- 0.25W
- Currentcollector Ic Max
- 100mA
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Collector Emitter Breakdown Max
- 50V
- Polaritychannel Type
- NPN
- Power Max
- 250mW
- Transition Frequency
- 100MHz
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2009
- Configuration
- SINGLE
- Terminal Formu
- GULL WING
- Collectorbase Capacitancemax
- 3.5pF
- Yüzey Montaj
- YES
- Temel Parça No
- 2PD601A
- Pin Sayısı
- 3
- Jesd30 Code
- R-PDSO-G3
- Qualification Status
- Not Qualified
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