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RoHS
Compliant
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Technical team support
Specifications
- Gate Charge Qg Vgs
- 0.8nC @ 4.5V
- Power Dissipation Max
- 350mW Ta
- ECCN Kodu
- EAR99
- RoHS
- Lead free / RoHS Compliant
- Input Capacitance Ciss Max Vds
- 50pF @ 10V
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Transistor Element Material
- SILICON
- HTS Kodu
- 8541.21.00.75
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Terminal Sayısı
- 3
- Pcn Designspecification
- Resin Hardener 02/Jul/2013
- Vgsth Max Id
- 2.4V @ 250碌A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Input Capacitance Ciss Vds
- 50pF @ 10V
- Online Catalog
- N-Channel Logic Level Gate FETs
- Rds On Max Id Vgs
- 1.6 Ohm @ 500mA, 10V
- Pcn Packaging
- Lighter Reels 02/Jan/2014
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgs Max
- ±20V
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- Fet Feature
- Logic Level Gate
- Power Max
- 350mW
- Tedarikçi Cihaz Paketi
- SOT-23 (TO-236AB)
- Operating Mode
- ENHANCEMENT MODE
- Ds Breakdown Voltagemin
- 60V
- Terminal Kaplaması
- Tin (Sn)
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Drain To Source Voltage Vdss
- 60V
- Family
- FETs - Single
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 360mA (Ta)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Application
- SWITCHING
- Fet Type
- MOSFET N-Channel, Metal Oxide
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