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Specifications
- Resistor Emitter Base R2
- 2.2 kOhms
- Currentcollector Ic Max
- 100 mA
- Vce Saturation Max Ib Ic
- 150mV @ 500µA, 10mA
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 20mA, 5V
- Ürün Durumu
- Active
- Tedarikçi Cihaz Paketi
- DFN1006B-3
- Power Max
- 250 mW
- Temel Ürün No
- PDTC123
- Voltage Collector Emitter Breakdown Max
- 50 V
- Paket
- Bulk
- Resistor Base R1
- 2.2 kOhms
- Frequency Transition
- 230 MHz
- Transistor Type
- NPN - Pre-Biased
- Current Collector Cutoff Max
- 1µA
- Kılıf / Paket
- SC-101, SOT-883
- Montaj Tipi
- Surface Mount
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