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C3 ChipZentronix

NXP

PDTC115EMB315

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Frequency Transition
230 MHz
Boyut / Ölçü
0.098 L x 0.079 W (2.50mm x 2.00mm)
Current Supply Max
4.5mA
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
-20°C ~ 70°C
Tip
XO (Standard)
Vce Saturation Max Ib Ic
150mV @ 250µA, 5mA
Power Max
250 mW
Besleme Gerilimi
2.8V
Resistor Emitter Base R2
100 kOhms
Current Collector Cutoff Max
1µA
Transistor Type
NPN - Pre-Biased
Dc Current Gain Hfe Min Ic Vce
80 @ 5mA, 5V
Seri
SiT1602B
Function
Enable/Disable
Kılıf / Paket
4-SMD, No Lead
Resistor Base R1
100 kOhms
Frekans
66.6 MHz
Output
HCMOS, LVCMOS
Voltage Collector Emitter Breakdown Max
50 V
Maks. Oturma Yüksekliği
0.031 (0.80mm)
Frequency Stability
±50ppm
Tedarikçi Cihaz Paketi
DFN1006B-3
Paket
Strip
Ürün Durumu
Active
Currentcollector Ic Max
20 mA
Base Resonator
MEMS

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