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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 100mV @ 2.5mA, 50mA
- Frequency Transition
- 140 MHz
- Montaj Tipi
- Surface Mount
- Current Supply Max
- 2mA
- Besleme Gerilimi
- 3V
- Polaritychannel Type
- PNP
- Fabrika Tedarik Süresi
- 4 Weeks
- Max Power Dissipation
- 300mW
- Transistor Type
- NPN - Pre-Biased
- Pin Sayısı
- 3
- Current Collector Cutoff Max
- 500nA
- Collectoremitter Breakdown Voltage
- 50V
- Transition Frequency
- 140MHz
- Resistor Base R1
- 10 kOhms
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maks. Oturma Yüksekliği
- 0.039 (1.00mm)
- Voltage Collector Emitter Breakdown Max
- 50 V
- RoHS Durumu
- ROHS3 Compliant
- Base Resonator
- Crystal
- Currentcollector Ic Max
- 500 mA
- Max Collector Current
- 500mA
- Transistor Application
- SWITCHING
- Paket
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- -40°C ~ 85°C
- Yayın Yılı
- 2014
- Number Of Elements
- 1
- Tip
- TCXO
- Ambalaj
- Tape & Reel (TR)
- Terminal Sayısı
- 3
- Boyut / Ölçü
- 0.098 L x 0.079 W (2.50mm x 2.00mm)
- Power Max
- 300 mW
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 50mA, 5V
- Seri
- 520
- Resistor Emitter Base R2
- 10 kOhms
- Collector Emitter Voltage Vceo
- 100mV
- Kılıf / Paket
- 4-SMD, No Lead
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 1
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