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NTE Electronics, Inc

NTE2525

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Power Max
1 W
Weight
72.574779 g
Category
Bipolar Power
Power Dissipation
1(W)
Max Collector Current
8 A
Dc Current Gain Hfe Min Ic Vce
100 @ 500mA, 2V
Max Power Dissipation
20 W
Transistor Type
PNP
Uzunluk
152.4 mm
Vce Saturation Max Ib Ic
500mV @ 200mA, 4A
Çalışma Sıcaklığı
150°C (TJ)
Transistor Polarity
PNP
Transition Frequency
130 MHz
Current Collector Cutoff Max
1μA (ICBO)
Operating Temp Range
-55C to 150C
Kılıf / Paket
TO-251-3 Short Leads, IPak, TO-251AA
Collectorbase Voltage
60(V)
Collector Base Voltage Vcbo
60 V
Genişlik
76.2 mm
Maks. Çalışma Sıcaklığı
150 °C
Üretici Parça No
NTE2525
Collectoremitter Breakdown Voltage
50 V
Voltage Collector Emitter Breakdown Max
50 V
Yükseklik
12.7 mm
Pin Sayısı
3
Emitterbase Voltage
6(V)
RoHS
Compliant
Operating Temperature Classification
Military
Montaj
Through Hole
Configuration
Single
Mounting
Through Hole
Output Power
Not Required(W)
Currentcollector Ic Max
8 A
Montaj Tipi
Through Hole
Collector Current Dc
8(A)
Reach Svhc
No SVHC
Rad Hardened
No
Pin Sayısı
3 +Tab
Ürün Durumu
Active
Frequency Transition
130MHz

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