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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ds Breakdown Voltagemin
- 100 V
- Drain To Source Resistance
- 55 mΩ
- Tip
- Power MOSFET
- Polarity
- N
- Reach Svhc
- Unknown
- Rad Hardened
- No
- Rds On Max Id Vgs
- 55mOhm @ 20A, 10V
- Technology
- MOSFET (Metal Oxide)
- Ürün Durumu
- Active
- Package Shape
- ROUND
- Power Dissipation Max
- 150W (Tc)
- Pin Sayısı
- 2 +Tab
- Threshold Voltage
- 4 V
- Gate Charge Qg Max Vgs
- 120 nC @ 10 V
- Polaritychannel Type
- N-CHANNEL
- Power Dissipationmax Abs
- 125 W
- Number Of Elements
- 1
- Tedarikçi Cihaz Paketi
- TO-3
- Paket
- Bag
- Terminal Formu
- PIN/PEG
- Pulsed Drain Currentmax Idm
- 160 A
- Power Dissipation Ambientmax
- 150 W
- Min. Çalışma Sıcaklığı
- -55 °C
- Turnoff Timemax Toff
- 225 ns
- Operating Mode
- ENHANCEMENT MODE
- Drain Currentmax Abs Id
- 32 A
- Transistor Application
- SWITCHING
- Part Life Cycle Code
- Active
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Mounting
- Through Hole
- Drainsource On Resistancemax
- 0.055 Ω
- Element Configuration
- Single
- Operating Temperature Classification
- Military
- RoHS
- Non-Compliant
- Package Style
- FLANGE MOUNT
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Through Hole
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
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