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NTE Electronics, Inc

NTE2362

Single BJT Transistors

RoHS: Compliant

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Specifications

Yüzey Montaj
NO
Montaj Tipi
Through Hole
Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Package Style
CYLINDRICAL
Power Max
300 mW
Number Of Terminals
3
Dc Current Gain Hfe Min Ic Vce
200 @ 10mA, 5V
Collector Currentmax Ic
0.5 A
Configuration
SINGLE
Terminal Pozisyonu
BOTTOM
Part Life Cycle Code
Active
Transistor Application
SWITCHING
Collectoremitter Voltagemax
50 V
Transistor Type
PNP
Currentcollector Ic Max
500 mA
Dc Current Gainmin Hfe
200
Üretici Parça No
NTE2362
Qualification Status
Not Qualified
Voltage Collector Emitter Breakdown Max
50 V
HTS Kodu
8541.21.00.75
Ihs Manufacturer
NTE ELECTRONICS INC
Number Of Elements
1
Polaritychannel Type
PNP
Power Dissipationmax Abs
0.3 W
Terminal Formu
THROUGH-HOLE
Paket
Bag
Package Body Material
PLASTIC/EPOXY
Tedarikçi Cihaz Paketi
TO-92S
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Risk Rank
2.15
Package Shape
ROUND
Ürün Durumu
Active
Package Description
CYLINDRICAL, O-PBCY-T3
Jesd30 Code
O-PBCY-T3
Current Collector Cutoff Max
100nA (ICBO)
REACH Uyumluluk Kodu
unknown
Kılıf / Paket
TO-226-3, TO-92-3 Short Body
Transition Frequencynom Ft
300 MHz

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