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NTE Electronics, Inc

NTE159MCP

Single BJT Transistors

RoHS: Compliant

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Specifications

Power Max
625 mW
Category
Bipolar Small Signal
Number Of Terminals
3
Power Dissipation
0.625(W)
Collector Currentmax Ic
1 A
Dc Current Gain Hfe Min Ic Vce
50 @ 10mA, 10V
Terminal Pozisyonu
BOTTOM
Rohs Code
Yes
Transistor Type
PNP
Yüzey Montaj
NO
Vce Saturation Max Ib Ic
500mV @ 50mA, 500mA
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Jedec95 Code
TO-92
Risk Rank
2.14
Additional Feature
MATCHED COMPLIMENTARY PAIR CONTAINS NTE123AP AND NTE159
Transistor Polarity
PNP
Package Description
CYLINDRICAL, O-PBCY-W3
REACH Uyumluluk Kodu
unknown
Current Collector Cutoff Max
50nA (ICBO)
Operating Temp Range
-55C to 150C
Jesd30 Code
O-PBCY-W3
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Collectorbase Voltage
80(V)
Transition Frequencynom Ft
200 MHz
Üretici Parça No
NTE159MCP
Qualification Status
Not Qualified
Ihs Manufacturer
NTE ELECTRONICS INC
Voltage Collector Emitter Breakdown Max
80 V
Emitterbase Voltage
5(V)
Package Body Material
PLASTIC/EPOXY
Package Type
TO-92
Package Style
CYLINDRICAL
Transistor Element Material
SILICON
Operating Temperature Classification
Military
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Configuration
Single
Mounting
Through Hole
Transistor Application
SWITCHING
Part Life Cycle Code
Active
Collectoremitter Voltagemax
80 V

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