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NTE Electronics, Inc

NTE128P

Single BJT Transistors

RoHS: Compliant

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Specifications

Collector Currentmax Ic
1 A
Ihs Manufacturer
NTE ELECTRONICS INC
Montaj Tipi
Through Hole
Collectorbase Voltage
100(V)
Transition Frequencynom Ft
50 MHz
Operating Temp Range
-55C to 150C
Number Of Elements
1
Power Max
850 mW
Dc Current Gainmin Hfe
100
Terminal Pozisyonu
BOTTOM
Package Body Material
PLASTIC/EPOXY
Ürün Durumu
Active
Tedarikçi Cihaz Paketi
TO-237
Number Of Terminals
3
Current Collector Cutoff Max
100nA (ICBO)
Category
Bipolar Power
Paket
Bag
Kılıf / Paket
TO-237AA
Qualification Status
Not Qualified
Part Package Code
TO-237
Üretici Parça No
NTE128P
Pin Sayısı
3
Operating Temperature Classification
Military
Emitterbase Voltage
5(V)
Transistor Polarity
NPN
Dc Current Gain Hfe Min Ic Vce
100 @ 350mA, 2V
Power Dissipation
0.85(W)
Collectoremitter Voltagemax
80 V
Frequency Transition
50MHz
Transistor Type
NPN
Frekans
50(MHz)
Collector Current Dc
1(A)
Currentcollector Ic Max
1 A
Power Dissipationmax Abs
1 W
Configuration
Single
Package Type
TO-237
Transistor Element Material
SILICON
Rad Hardened
No
Transistor Application
SWITCHING
Terminal Formu
THROUGH-HOLE

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