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NTE Electronics, Inc

NTE123AP-10

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Transistor Type
NPN
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Current Collector Cutoff Max
100nA
Voltage Collector Emitter Breakdown Max
40 V
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA, 1V
Tedarikçi Cihaz Paketi
TO-92
Frequency Transition
250MHz
Ürün Durumu
Active
Üretici Parça No
NTE123AP-10
Power Max
625 mW
Montaj Tipi
Through Hole
Vce Saturation Max Ib Ic
750mV @ 50mA, 500mA
Paket
Bag
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Currentcollector Ic Max
600 mA

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