Volume pricing
- 1+ pcs$0.92
- 10+ pcs$0.87
- 100+ pcs$0.82
- 500+ pcs$0.77
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 11.7nC @ 10V
- Input Capacitance Ciss Max Vds
- 705pF @ 12.5V
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Kılıf / Paket
- SOT-1210, 8-LFPAK33
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2012
- Current Continuous Drain Id25
- 55A Tc
- Number Of Elements
- 1
- Parça Durumu
- Active
- Rise Time
- 10.1ns
- Rds On Max Id Vgs
- 8.65m Ω @ 15A, 10V
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 4
- Fall Time Typ
- 6.1 ns
- Power Dissipation Max
- 45W Tc
- Vgsth Max Id
- 1.95V @ 1mA
- Fabrika Tedarik Süresi
- 26 Weeks
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Drain To Source Breakdown Voltage
- 25V
- Jesd30 Code
- R-PSSO-G4
- Case Connection
- DRAIN
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- Turn Off Delay Time
- 11.1 ns
- Vgs Max
- ±20V
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation
- 45W
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current Id
- 55A
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