Volume pricing
- 1+ pcs$3.08
- 10+ pcs$2.91
- 100+ pcs$2.74
- 500+ pcs$2.59
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Case Connection
- DRAIN
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 80V
- Jedec95 Code
- TO-220AB
- Turn Off Delay Time
- 46 ns
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Power Dissipation
- 170W
- Gate To Source Voltage Vgs
- 20V
- Element Configuration
- Single
- Continuous Drain Current Id
- 90A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 21 ns
- Max Dual Supply Voltage
- 80V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 52nC @ 10V
- Input Capacitance Ciss Max Vds
- 3346pF @ 40V
- Kılıf / Paket
- TO-220-3
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.0087Ohm
- JESD-609 Kodu
- e3
- Yüzey Montaj
- NO
- Rds On Max Id Vgs
- 8.7m Ω @ 10A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2010
- Rise Time
- 26ns
- Parça Durumu
- Active
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 90A Tc
- Vgsth Max Id
- 4V @ 1mA
- Fabrika Tedarik Süresi
- 12 Weeks
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