Volume pricing
- 1+ pcs$3.00
- 10+ pcs$2.83
- 100+ pcs$2.67
- 500+ pcs$2.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Input Capacitance Ciss Max Vds
- 3346pF @ 40V
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 52nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.0087Ohm
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Rds On Max Id Vgs
- 8.7m Ω @ 10A, 10V
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 26ns
- Parça Durumu
- Active
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 90A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2012
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 1mA
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Dissipation Max
- 170W Tc
- Fall Time Typ
- 20 ns
- Case Connection
- DRAIN
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSSO-G2
- Drain To Source Breakdown Voltage
- 73V
- Vgs Max
- ±20V
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 46 ns
- Terminal Formu
- GULL WING
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Power Dissipation
- 170W
- Gate To Source Voltage Vgs
- 20V
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