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PSMN6R1-30YLDX

Nexperia USA Inc.

PSMN6R1-30YLDX

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.09
  • 10+ pcs$1.03
  • 100+ pcs$0.97
  • 500+ pcs$0.92

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RoHS

Compliant

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Specifications

Vgsth Max Id
2.2V @ 1mA
Fabrika Tedarik Süresi
12 Weeks
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Fall Time Typ
7.2 ns
Power Dissipation Max
47W Tc
Rds On Max Id Vgs
6m Ω @ 15A, 10V
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
4
Montaj Tipi
Surface Mount
Yayın Yılı
2014
Çalışma Sıcaklığı
-55°C~175°C TJ
Number Of Elements
1
Parça Durumu
Active
Rise Time
11ns
Current Continuous Drain Id25
66A Tc
Pulsed Drain Currentmax Idm
263A
Kılıf / Paket
SC-100, SOT-669
Operating Mode
ENHANCEMENT MODE
Drainsource On Resistancemax
0.00835Ohm
Yüzey Montaj
YES
Pin Sayısı
4
Radyasyon Dayanımı
No
Pin Sayısı
4
Gate Charge Qg Max Vgs
13.6nC @ 10V
Input Capacitance Ciss Max Vds
817pF @ 15V
Temel Parça No
PSMN6R1
Element Configuration
Single
Continuous Drain Current Id
66A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn On Delay Time
7.5 ns
Number Of Channels
1
Max Dual Supply Voltage
30V
Transistor Element Material
SILICON
Gate To Source Voltage Vgs
20V
Turn Off Delay Time
9.8 ns
Transistor Application
SWITCHING
Vgs Max
±20V
Fet Type
N-Channel
Terminal Formu
GULL WING
Case Connection
DRAIN

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