Volume pricing
- 1+ pcs$5.30
- 10+ pcs$5.00
- 100+ pcs$4.72
- 500+ pcs$4.45
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jedec95 Code
- TO-220AB
- Drain To Source Breakdown Voltage
- 100V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Uzunluk
- 6.35mm
- Turn Off Delay Time
- 83 ns
- Yükseklik
- 6.35mm
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- Power Dissipation
- 306W
- Turn On Delay Time
- 31 ns
- Max Dual Supply Voltage
- 100V
- Continuous Drain Current Id
- 100A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 8061pF @ 50V
- Gate Charge Qg Max Vgs
- 141nC @ 10V
- Genişlik
- 6.35mm
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Yüzey Montaj
- NO
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.0056Ohm
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- TO-220-3
- Weight
- 4.535924g
- Rise Time
- 46ns
- Parça Durumu
- Active
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 100A Tc
- Yayın Yılı
- 2012
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
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