Volume pricing
- 1+ pcs$1.51
- 10+ pcs$1.43
- 100+ pcs$1.35
- 500+ pcs$1.27
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 152 mJ
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0045Ohm
- Fall Time Typ
- 9 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 30 ns
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PSSO-G2
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- YES
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Dual Supply Voltage
- 40V
- Pulsed Drain Currentmax Idm
- 545A
- Input Capacitance Ciss Max Vds
- 2683pF @ 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 4.5m Ω @ 25A, 10V
- Yayın Yılı
- 2011
- Parça Durumu
- Active
- Terminal Sayısı
- 2
- Montaj Tipi
- Surface Mount
- Rise Time
- 23ns
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 42.3nC @ 10V
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Tin (Sn)
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
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