Volume pricing
- 1+ pcs$2.04
- 10+ pcs$1.93
- 100+ pcs$1.82
- 500+ pcs$1.72
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Vgsth Max Id
- 2.15V @ 1mA
- Turn Off Delay Time
- 44 ns
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 103W
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Avalanche Energy Rating Eas
- 74 mJ
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 21 ns
- Drainsource On Resistancemax
- 0.0052Ohm
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 41.5nC @ 10V
- Pin Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Rise Time
- 58ns
- Parça Durumu
- Active
- Terminal Sayısı
- 2
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 28 ns
- Power Dissipation Max
- 103W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- YES
- Case Connection
- DRAIN
- Jesd30 Code
- R-PSSO-G2
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Yayın Yılı
- 2012
- Rds On Max Id Vgs
- 4.1m Ω @ 15A, 10V
- Transistor Application
- SWITCHING
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