PSMN4R3-100PS,127

Specifications

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

122 ns

Jedec95 Code

TO-220AB

Power Dissipation

338W

Transistor Element Material

SILICON

Ambalaj

Tube

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

63 ns

Pin Sayısı

3

Gate Charge Qg Max Vgs

170nC @ 10V

Terminal Sayısı

3

Parça Durumu

Active

Rise Time

91ns

Montaj Tipi

Through Hole

Drain To Source Breakdown Voltage

100V

Turn On Delay Time

45 ns

Vgs Max

±20V

JESD-609 Kodu

e3

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

338W Tc

Kılıf / Paket

TO-220-3

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

120A Tc

Case Connection

DRAIN

Yüzey Montaj

NO

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

4.3m Ω @ 25A, 10V

Yayın Yılı

2011

Continuous Drain Current Id

120A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Max Dual Supply Voltage

100V