PSMN4R0-30YLDX

Specifications

Parça Durumu

Active

Terminal Sayısı

4

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

21.2ns

Seri

TrenchMOS™

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

19.4nC @ 10V

Pin Sayısı

4

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

64W Tc

Number Of Elements

1

Vgs Max

±20V

Turn On Delay Time

10.7 ns

Drain To Source Breakdown Voltage

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

95A Tc

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1272pF @ 15V

Max Dual Supply Voltage

30V

Pulsed Drain Currentmax Idm

378A

Continuous Drain Current Id

95A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

4m Ω @ 25A, 10V

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

14.9 ns

Vgsth Max Id

2.2V @ 1mA

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Jedec95 Code

MO-235

Avalanche Energy Rating Eas

63 mJ

Pin Sayısı

4

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Ambalaj

Tape & Reel (TR)