PSMN3R4-30PL,127

Specifications

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

28 ns

Ambalaj

Tube

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Avalanche Energy Rating Eas

200 mJ

Power Dissipation

114W

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Fet Type

N-Channel

Direnç

4.1MOhm

Vgsth Max Id

2.15V @ 1mA

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

59 ns

Yayın Yılı

2010

Rds On Max Id Vgs

3.4m Ω @ 10A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

30V

Pulsed Drain Currentmax Idm

609A

Input Capacitance Ciss Max Vds

3907pF @ 12V

Fabrika Tedarik Süresi

12 Weeks

Case Connection

DRAIN

Yüzey Montaj

NO

Current Continuous Drain Id25

100A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

40 ns

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Vgs Max

±20V

Power Dissipation Max

114W Tc

Kılıf / Paket

TO-220-3

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Gate Charge Qg Max Vgs

64nC @ 10V