Volume pricing
- 1+ pcs$7.77
- 10+ pcs$7.33
- 100+ pcs$6.92
- 500+ pcs$6.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 130nC @ 10V
- Rise Time
- 26ns
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 60V
- Turn On Delay Time
- 31 ns
- Power Dissipation Max
- 306W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-220-3
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Yayın Yılı
- 2010
- Rds On Max Id Vgs
- 3m Ω @ 25A, 10V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 100A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 8079pF @ 30V
- Pulsed Drain Currentmax Idm
- 824A
- Max Dual Supply Voltage
- 60V
- Fet Type
- N-Channel
- Contact Plating
- Tin
- Vgsth Max Id
- 4V @ 1mA
- Turn Off Delay Time
- 77 ns
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 306W
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Avalanche Energy Rating Eas
- 800 mJ
- RoHS Durumu
- ROHS3 Compliant
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