Volume pricing
- 1+ pcs$0.92
- 10+ pcs$0.86
- 100+ pcs$0.82
- 500+ pcs$0.77
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Power Dissipation
- 92W
- Jedec95 Code
- MO-235
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 32 ns
- Direnç
- 4.1MOhm
- Vgsth Max Id
- 1.95V @ 1mA
- Fet Type
- N-Channel
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 13 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Additional Feature
- HIGH RELIABILITY
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SC-100, SOT-669
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Power Dissipation Max
- 92W Tc
- Turn On Delay Time
- 19.5 ns
- Drain To Source Breakdown Voltage
- 25V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Rise Time
- 19ns
- Terminal Sayısı
- 4
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- Pin Sayısı
- 4
- Gate Charge Qg Max Vgs
- 33nC @ 10V
- Input Capacitance Ciss Max Vds
- 2083pF @ 12V
- Max Dual Supply Voltage
- 25V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Yayın Yılı
- 2011
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