PSMN2R8-25MLC,115

Specifications

Kılıf / Paket

SOT-1210, 8-LFPAK33

Power Dissipation Max

88W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Turn On Delay Time

16.4 ns

Drain To Source Breakdown Voltage

25V

Rise Time

24.6ns

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Parça Durumu

Active

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

8

Gate Charge Qg Max Vgs

37.7nC @ 10V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2432pF @ 12.5V

Max Dual Supply Voltage

25V

Pulsed Drain Currentmax Idm

536A

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

70A

Yayın Yılı

2012

Rds On Max Id Vgs

2.8m Ω @ 25A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

R-PSSO-G4

Current Continuous Drain Id25

70A Tc

Case Connection

DRAIN

Yüzey Montaj

YES

Fabrika Tedarik Süresi

26 Weeks

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Reference Standard

IEC-60134

Power Dissipation

88W

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

19.9 ns

Vgsth Max Id

2.15V @ 1mA

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.00375Ohm