PSMN2R6-40YS,115

Specifications

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0028Ohm

Yükseklik

1.2mm

Number Of Channels

1

Ambalaj

Digi-Reel®

Gate To Source Voltage Vgs

20V

Pin Sayısı

4

REACH Uyumluluk Kodu

not_compliant

Power Dissipation

131W

Jedec95 Code

MO-235

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Turn Off Delay Time

46 ns

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2009

Rds On Max Id Vgs

2.8m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

3776pF @ 12V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

100A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Turn On Delay Time

24 ns

Max Junction Temperature Tj

175°C

Drain To Source Breakdown Voltage

40V

Kılıf / Paket

SC-100, SOT-669

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

131W Tc

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

63nC @ 10V

Pin Sayısı

4