Volume pricing
- 1+ pcs$2.86
- 10+ pcs$2.70
- 100+ pcs$2.54
- 500+ pcs$2.40
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- SINGLE
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Fall Time Typ
- 59 ns
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Turn On Delay Time
- 63 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Weight
- 453.59237mg
- Rds On Max Id Vgs
- 2.1m Ω @ 15A, 10V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Continuous Drain Id25
- 100A Tc
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Dissipation
- 211W
- Jedec95 Code
- TO-220AB
- Turn Off Delay Time
- 111 ns
- Vgsth Max Id
- 2.15V @ 1mA
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0028Ohm
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 555 mJ
- Ambalaj
- Tube
- Genişlik
- 6.35mm
- Yükseklik
- 6.35mm
- Number Of Elements
- 1
- Power Dissipation Max
- 211W Tc
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 30V
- Rise Time
- 125ns
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
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