PSMN1R7-60BS,118

Specifications

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

137nC @ 10V

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation Max

306W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Fabrika Tedarik Süresi

12 Weeks

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

120A Tc

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Rds On Max Id Vgs

2m Ω @ 25A, 10V

Pulsed Drain Currentmax Idm

1076A

Input Capacitance Ciss Max Vds

9997pF @ 30V

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

913 mJ

Drain To Source Voltage Vdss

60V

Ds Breakdown Voltagemin

60V

Drain Currentmax Abs Id

120A

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.002Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ