Volume pricing
- 1+ pcs$0.76
- 10+ pcs$0.72
- 100+ pcs$0.68
- 500+ pcs$0.64
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 12493pF @ 12V
- Max Dual Supply Voltage
- 30V
- Rds On Max Id Vgs
- 1.7m Ω @ 25A, 10V
- Yayın Yılı
- 2009
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 100A Tc
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Fabrika Tedarik Süresi
- 20 Weeks
- Power Dissipation Max
- 306W Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 104 ns
- Terminal Sayısı
- 3
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Rise Time
- 163ns
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Pin Sayısı
- 3
- Weight
- 453.59237mg
- Gate Charge Qg Max Vgs
- 212nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Uzunluk
- 6.35mm
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 87 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Genişlik
- 6.35mm
- Ambalaj
- Tube
- Yükseklik
- 6.35mm
- Transistor Element Material
- SILICON
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