Volume pricing
- 1+ pcs$1.41
- 10+ pcs$1.33
- 100+ pcs$1.25
- 500+ pcs$1.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 20.6 ns
- Number Of Channels
- 1
- Ambalaj
- Tape & Reel (TR)
- Avalanche Energy Rating Eas
- 653 mJ
- Additional Feature
- HIGH RELIABILITY
- Pin Sayısı
- 4
- Gate To Source Voltage Vgs
- 20V
- Jedec95 Code
- MO-235
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 2.2V @ 1mA
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 31.5 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 1.42m Ω @ 25A, 10V
- Yayın Yılı
- 2014
- Max Dual Supply Voltage
- 30V
- Input Capacitance Ciss Max Vds
- 3840pF @ 15V
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Case Connection
- DRAIN
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 100A Tc
- Turn On Delay Time
- 23 ns
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- SC-100, SOT-669
- Power Dissipation Max
- 166W Tc
- Number Of Elements
- 1
- Vgs Max
- ±20V
- Element Configuration
- Single
- Pin Sayısı
- 4
- Gate Charge Qg Max Vgs
- 54.8nC @ 10V
- Terminal Formu
- GULL WING
- Parça Durumu
- Active
- Terminal Sayısı
- 4
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