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PSMN1R2-25YL,115

Nexperia USA Inc.

PSMN1R2-25YL,115

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.41
  • 10+ pcs$2.28
  • 100+ pcs$2.15
  • 500+ pcs$2.03

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RoHS

Compliant

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Specifications

Fall Time Typ
56 ns
Radyasyon Dayanımı
No
Pin Sayısı
4
Terminal Pozisyonu
SINGLE
Transistor Element Material
SILICON
Operating Mode
ENHANCEMENT MODE
Direnç
1.2MOhm
Fet Type
N-Channel
Transistor Application
SWITCHING
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rds On Max Id Vgs
1.2m Ω @ 15A, 10V
Current Continuous Drain Id25
100A Tc
Case Connection
DRAIN
Fabrika Tedarik Süresi
12 Weeks
Turn On Delay Time
69 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Parça Durumu
Active
Pin Sayısı
4
Çalışma Sıcaklığı
-55°C~150°C TJ
RoHS Durumu
ROHS3 Compliant
Avalanche Energy Rating Eas
677 mJ
Gate To Source Voltage Vgs
20V
Ambalaj
Digi-Reel®
Power Dissipation
121W
Threshold Voltage
1.7V
Turn Off Delay Time
94 ns
Vgsth Max Id
2.15V @ 1mA
Pulsed Drain Currentmax Idm
815A
Max Dual Supply Voltage
25V
Input Capacitance Ciss Max Vds
6380pF @ 12V
Continuous Drain Current Id
100A
Yayın Yılı
2014
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Yüzey Montaj
YES
Kılıf / Paket
SOT-1023, 4-LFPAK
JESD-609 Kodu
e3
Vgs Max
±20V
Reach Svhc
No SVHC
Number Of Elements
1
Power Dissipation Max
121W Tc

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