PSMN1R0-25YLDX

Specifications

Terminal Sayısı

4

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Pin Sayısı

4

Gate Charge Qg Max Vgs

71.8nC @ 10V

Terminal Formu

GULL WING

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

160W Tc

Number Of Elements

1

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

R-PSSO-G4

Case Connection

DRAIN

Current Continuous Drain Id25

100A Tc

Fabrika Tedarik Süresi

12 Weeks

Pulsed Drain Currentmax Idm

1226A

Input Capacitance Ciss Max Vds

5308pF @ 12V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

100A

Transistor Application

SWITCHING

Rds On Max Id Vgs

0.89m Ω @ 25A, 10V

Yayın Yılı

2014

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Vgsth Max Id

2.2V @ 1mA

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Reference Standard

IEC-60134

Jedec95 Code

MO-235

Fet Feature

Schottky Diode (Body)

Avalanche Energy Rating Eas

1762 mJ

Additional Feature

HIGH RELIABILITY

Drain To Source Voltage Vdss

25V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.00143Ohm

Ds Breakdown Voltagemin

25V

RoHS Durumu

ROHS3 Compliant