Volume pricing
- 1+ pcs$2.86
- 10+ pcs$2.70
- 100+ pcs$2.54
- 500+ pcs$2.40
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.07Ohm
- Fall Time Typ
- 90 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Avalanche Energy Rating Eas
- 462 mJ
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Power Dissipation
- 250W
- Jedec95 Code
- TO-220AB
- Turn Off Delay Time
- 80 ns
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 4570pF @ 25V
- Pulsed Drain Currentmax Idm
- 140A
- Max Dual Supply Voltage
- 200V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 35A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2002
- Rds On Max Id Vgs
- 70m Ω @ 17A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 35A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 20 Weeks
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 250W Tc
- Turn On Delay Time
- 22 ns
- Drain To Source Breakdown Voltage
- 200V
- Montaj Tipi
- Through Hole
- Rise Time
- 100ns
- Kurşunsuz
- Lead Free
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