Volume pricing
- 1+ pcs$5.70
- 10+ pcs$5.38
- 100+ pcs$5.08
- 500+ pcs$4.79
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tube
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.057Ohm
- Fall Time Typ
- 78 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 105 ns
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Power Dissipation
- 250W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 39A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 3750pF @ 25V
- Max Dual Supply Voltage
- 200V
- Pulsed Drain Currentmax Idm
- 156A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 39A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 57m Ω @ 17A, 10V
- Yayın Yılı
- 2011
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Rise Time
- 58ns
- Montaj Tipi
- Through Hole
- Seri
- TrenchMOS™
- Gate Charge Qg Max Vgs
- 96nC @ 10V
- HTS Kodu
- 8541.29.00.75
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
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